Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors
نویسندگان
چکیده
منابع مشابه
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...
متن کاملMonte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors
We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor sDGSOId operated as a velocity modulation transistor sVMTd and as a conventional field effect transistor sFETd. Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modula...
متن کاملThe impact of lanthanum hafnium oxide as a gate insulator on the performance of zinc oxide thin film transistors
Recently, the quality of the oxide-TFT gate insulator is given the utmost consideration strongly affecting device performance. In this study, preliminary experiments were carried out using a multi-component of lanthanum hafnium oxide (LHO) as a gate insulator. First, we investigated the electrical properties of LHO thin films deposited by ECR-ALD. Also, we report the fabrication and characteris...
متن کاملGate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors
We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...
متن کاملA comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors
A comprehensive study of velocity overshoot in double gate silicon on insulator (DGSOI) transistors has been undertaken. Monte Carlo simulations were performed to clarify the dependence of velocity overshoot effects on the low field mobility, channel inversion charge and silicon layer thickness. The relationships and dependences between the energyand momentum-relaxation times were also investig...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ChemElectroChem
سال: 2020
ISSN: 2196-0216,2196-0216
DOI: 10.1002/celc.202000687